PART |
Description |
Maker |
DS1340C-3 DS1340C-18 DS1340U-33 DS1340U-18 DS1340C |
I2C RTC with Trickle Charger 128 x 128 pixel format, LED or EL Backlight available REAL TIME CLOCK, PDSO8
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Maxim Integrated Produc... MAXIM - Dallas Semiconductor Maxim Integrated Products, Inc.
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5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM. 15ns access time. Lead finish hot gold. 512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped. 512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow. 512K x 18 SRAM. 15ns access time. Lead finish factory option. 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
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Aeroflex Circuit Technology
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AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256KX16 CMOS DRAM (EDO) 5V 256K?6 CMOS DRAM (EDO) x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO) 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation ALSC
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ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列 EIGHT DARLINGTON ARRAYS
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STMicroelectronics N.V. Allegro MicroSystems STMICROELECTRONICS[STMicroelectronics]
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LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 |
Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
|
SANYO
|
M41T60 M41T60Q6F |
SERIAL ACCESS REAL-TIME CLOCK
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q5 |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)). UT9Q512K32 16Megabit SRAM MCM UT9Q512K32 16Megabit SRAM MCM 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)). 512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
|
AEROFLEX[Aeroflex Circuit Technology]
|
M41T8011 |
Serial access real-time clock with alarm
|
STMicroelectronics
|
M41T81M6 M41T81M6E M41T81M6F M41T81M6TR M41T81MX6 |
Serial Access Real-Time Clock with Alarms
|
ST Microelectronics
|
M41T62 M41T65 M41T64 M41T63 |
Serial Access Real-Time Clock with Alarms
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
CY14B101KA-ZS25XI CY14B101KA-ZS25XIT CY14B101KA-SP |
1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock
|
Cypress Semiconductor
|
UT6164CJC-10 UT6164CJC-12 UT6164CJC-15 |
Access time: 10 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM
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UTRON Technology
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